Reaction dynamics of molecular hydrogen on silicon surfaces – importance of lattice degrees of freedom
نویسندگان
چکیده
Hydrogen dissociation on silicon surfaces is strongly activated both by kinetic energy of the H2 molecules as well as by surface temperature. The latter effect is correlated to the dynamical generation of lattice distortions which possess a higher reactivity, similar to static lattice distortions at steps or defects. They lead to a broad distribution of barriers in adsorption which result in a lowmean translational energy in desorption.
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